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EPC2012
- Part Number:
- EPC2012
- Manufacturer:
- EPC
- Description:
- TRANS GAN 200V 3A BUMPED DIE
- Lead Free Status / RoHS Status:
- Lead free / RoHS Compliant
- Available Quantity:
- 15514 Pieces
- Data sheet:
- EPC2012.pdf
Introduction
Specifications
| Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
|---|---|
| Technology: | GaNFET (Gallium Nitride) |
| Supplier Device Package: | Die |
| Series: | eGaN® |
| Rds On (Max) @ Id, Vgs: | 100 mOhm @ 3A, 5V |
| Power Dissipation (Max): | - |
| Packaging: | Cut Tape (CT) |
| Package / Case: | Die |
| Other Names: | 917-1017-1 |
| Operating Temperature: | -40°C ~ 125°C (TJ) |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Part Number: | EPC2012 |
| Input Capacitance (Ciss) (Max) @ Vds: | 145pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs: | 1.8nC @ 5V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Expanded Description: | N-Channel 200V 3A (Ta) Surface Mount Die |
| Drain to Source Voltage (Vdss): | 200V |
| Description: | TRANS GAN 200V 3A BUMPED DIE |
| Current - Continuous Drain (Id) @ 25°C: | 3A (Ta) |
| Email: | [email protected] |
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