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MJD117-1G
- Part Number:
- MJD117-1G
- Manufacturer:
- AMI Semiconductor / ON Semiconductor
- Description:
- TRANS PNP DARL 100V 2A IPAK
- Lead Free Status / RoHS Status:
- Lead free / RoHS Compliant
- Available Quantity:
- 15168 Pieces
- Data sheet:
- MJD117-1G.pdf
Introduction
Specifications
| Voltage - Collector Emitter Breakdown (Max): | 100V |
|---|---|
| Vce Saturation (Max) @ Ib, Ic: | 3V @ 40mA, 4A |
| Transistor Type: | PNP - Darlington |
| Supplier Device Package: | I-Pak |
| Series: | - |
| Power - Max: | 1.75W |
| Packaging: | Tube |
| Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
| Other Names: | MJD117-1G-ND MJD117-1GOS |
| Operating Temperature: | -65°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 16 Weeks |
| Manufacturer Part Number: | MJD117-1G |
| Frequency - Transition: | 25MHz |
| Expanded Description: | Bipolar (BJT) Transistor PNP - Darlington 100V 2A 25MHz 1.75W Through Hole I-Pak |
| Description: | TRANS PNP DARL 100V 2A IPAK |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 1000 @ 2A, 3V |
| Current - Collector Cutoff (Max): | 20µA |
| Current - Collector (Ic) (Max): | 2A |
| Email: | [email protected] |
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