MJD112G
MJD112G
Part Number:
MJD112G
Manufacturer:
AMI Semiconductor / ON Semiconductor
Description:
TRANS NPN DARL 100V 2A DPAK
Lead Free Status / RoHS Status:
Lead free / RoHS Compliant
Available Quantity:
19098 Pieces
Data sheet:
MJD112G.pdf

Introduction

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Specifications

Voltage - Collector Emitter Breakdown (Max):100V
Vce Saturation (Max) @ Ib, Ic:3V @ 40mA, 4A
Transistor Type:NPN - Darlington
Supplier Device Package:DPAK-3
Series:-
Power - Max:1.75W
Packaging:Tube
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Other Names:MJD112G-ND
MJD112GOS
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:10 Weeks
Manufacturer Part Number:MJD112G
Frequency - Transition:25MHz
Expanded Description:Bipolar (BJT) Transistor NPN - Darlington 100V 2A 25MHz 1.75W Surface Mount DPAK-3
Description:TRANS NPN DARL 100V 2A DPAK
DC Current Gain (hFE) (Min) @ Ic, Vce:1000 @ 2A, 3V
Current - Collector Cutoff (Max):20µA
Current - Collector (Ic) (Max):2A
Email:[email protected]

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