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MJD112T4G
- Part Number:
- MJD112T4G
- Manufacturer:
- AMI Semiconductor / ON Semiconductor
- Description:
- TRANS NPN DARL 100V 2A DPAK
- Lead Free Status / RoHS Status:
- Lead free / RoHS Compliant
- Available Quantity:
- 13211 Pieces
- Data sheet:
- MJD112T4G.pdf
Introduction
Specifications
| Voltage - Collector Emitter Breakdown (Max): | 100V |
|---|---|
| Vce Saturation (Max) @ Ib, Ic: | 3V @ 40mA, 4A |
| Transistor Type: | NPN - Darlington |
| Supplier Device Package: | DPAK-3 |
| Series: | - |
| Power - Max: | 1.75W |
| Packaging: | Tape & Reel (TR) |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Other Names: | MJD112T4GOS MJD112T4GOS-ND MJD112T4GOSTR |
| Operating Temperature: | -65°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 12 Weeks |
| Manufacturer Part Number: | MJD112T4G |
| Frequency - Transition: | 25MHz |
| Expanded Description: | Bipolar (BJT) Transistor NPN - Darlington 100V 2A 25MHz 1.75W Surface Mount DPAK-3 |
| Description: | TRANS NPN DARL 100V 2A DPAK |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 1000 @ 2A, 3V |
| Current - Collector Cutoff (Max): | 20µA |
| Current - Collector (Ic) (Max): | 2A |
| Email: | [email protected] |
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