SIS413DN-T1-GE3
SIS413DN-T1-GE3
Part Number:
SIS413DN-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET P-CH 30V 18A PPAK 1212-8
Lead Free Status / RoHS Status:
Lead free / RoHS Compliant
Available Quantity:
17827 Pieces
Data sheet:
SIS413DN-T1-GE3.pdf

Introduction

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Specifications

Vgs(th) (Max) @ Id:2.5V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PowerPAK® 1212-8
Series:TrenchFET®
Rds On (Max) @ Id, Vgs:9.4 mOhm @ 15A, 10V
Power Dissipation (Max):3.7W (Ta), 52W (Tc)
Packaging:Tape & Reel (TR)
Package / Case:PowerPAK® 1212-8
Other Names:SIS413DN-T1-GE3TR
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:15 Weeks
Manufacturer Part Number:SIS413DN-T1-GE3
Input Capacitance (Ciss) (Max) @ Vds:4280pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:110nC @ 10V
FET Type:P-Channel
FET Feature:-
Expanded Description:P-Channel 30V 18A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Drain to Source Voltage (Vdss):30V
Description:MOSFET P-CH 30V 18A PPAK 1212-8
Current - Continuous Drain (Id) @ 25°C:18A (Tc)
Email:[email protected]

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