SIHP21N65EF-GE3
SIHP21N65EF-GE3
Part Number:
SIHP21N65EF-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET N-CH 650V 21A TO-220AB
Lead Free Status / RoHS Status:
Lead free / RoHS Compliant
Available Quantity:
16218 Pieces
Data sheet:
1.SIHP21N65EF-GE3.pdf2.SIHP21N65EF-GE3.pdf3.SIHP21N65EF-GE3.pdf

Introduction

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Specifications

Vgs(th) (Max) @ Id:4V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-220AB
Series:-
Rds On (Max) @ Id, Vgs:180 mOhm @ 11A, 10V
Power Dissipation (Max):208W (Tc)
Packaging:Tube
Package / Case:TO-220-3
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:22 Weeks
Manufacturer Part Number:SIHP21N65EF-GE3
Input Capacitance (Ciss) (Max) @ Vds:2322pF @ 100V
Gate Charge (Qg) (Max) @ Vgs:106nC @ 10V
FET Type:N-Channel
FET Feature:-
Expanded Description:N-Channel 650V 21A (Tc) 208W (Tc) Through Hole TO-220AB
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):650V
Description:MOSFET N-CH 650V 21A TO-220AB
Current - Continuous Drain (Id) @ 25°C:21A (Tc)
Email:[email protected]

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