SQJQ100E-T1_GE3
Part Number:
SQJQ100E-T1_GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET N-CH 40V 200A PWRPAK 8X8
Lead Free Status / RoHS Status:
Lead free / RoHS Compliant
Available Quantity:
14341 Pieces
Data sheet:
SQJQ100E-T1_GE3.pdf

Introduction

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Specifications

Vgs(th) (Max) @ Id:3.5V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PowerPAK® 8 x 8
Series:Automotive, AEC-Q101, TrenchFET®
Rds On (Max) @ Id, Vgs:1.5 mOhm @ 20A, 10V
Power Dissipation (Max):150W (Tc)
Packaging:Tape & Reel (TR)
Package / Case:8-PowerTDFN
Other Names:SQJQ100E-T1_GE3TR
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:15 Weeks
Manufacturer Part Number:SQJQ100E-T1_GE3
Input Capacitance (Ciss) (Max) @ Vds:14780pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:165nC @ 10V
FET Type:N-Channel
FET Feature:-
Expanded Description:N-Channel 40V 200A (Tc) 150W (Tc) Surface Mount PowerPAK® 8 x 8
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):40V
Description:MOSFET N-CH 40V 200A PWRPAK 8X8
Current - Continuous Drain (Id) @ 25°C:200A (Tc)
Email:[email protected]

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