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SIHB35N60E-GE3
- Part Number:
- SIHB35N60E-GE3
- Manufacturer:
- Vishay / Siliconix
- Description:
- MOSFET N-CH 600V 32A D2PAK TO263
- Lead Free Status / RoHS Status:
- Lead free / RoHS Compliant
- Available Quantity:
- 19619 Pieces
- Data sheet:
- SIHB35N60E-GE3.pdf
Introduction
Specifications
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
|---|---|
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | D²PAK (TO-263) |
| Series: | - |
| Rds On (Max) @ Id, Vgs: | 94 mOhm @ 17A, 10V |
| Power Dissipation (Max): | 250W (Tc) |
| Packaging: | Tube |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Other Names: | SiHB35N60E-GE3 |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 10 Weeks |
| Manufacturer Part Number: | SIHB35N60E-GE3 |
| Input Capacitance (Ciss) (Max) @ Vds: | 2760pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs: | 132nC @ 10V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Expanded Description: | N-Channel 650V 32A (Tc) 250W (Tc) Surface Mount D²PAK (TO-263) |
| Drain to Source Voltage (Vdss): | 650V |
| Description: | MOSFET N-CH 600V 32A D2PAK TO263 |
| Current - Continuous Drain (Id) @ 25°C: | 32A (Tc) |
| Email: | [email protected] |
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