SIHB30N60E-E3
SIHB30N60E-E3
Part Number:
SIHB30N60E-E3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET N-CH 600V 29A D2PAK
Lead Free Status / RoHS Status:
Lead free / RoHS Compliant
Available Quantity:
17089 Pieces
Data sheet:
SIHB30N60E-E3.pdf

Introduction

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Specifications

Vgs(th) (Max) @ Id:4V @ 250µA
Technology:MOSFET (Metal Oxide)
Supplier Device Package:D²PAK (TO-263)
Series:-
Rds On (Max) @ Id, Vgs:125 mOhm @ 15A, 10V
Power Dissipation (Max):250W (Tc)
Packaging:Tape & Reel (TR)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:21 Weeks
Manufacturer Part Number:SIHB30N60E-E3
Input Capacitance (Ciss) (Max) @ Vds:2600pF @ 100V
Gate Charge (Qg) (Max) @ Vgs:130nC @ 10V
FET Type:N-Channel
FET Feature:-
Expanded Description:N-Channel 600V 29A (Tc) 250W (Tc) Surface Mount D²PAK (TO-263)
Drain to Source Voltage (Vdss):600V
Description:MOSFET N-CH 600V 29A D2PAK
Current - Continuous Drain (Id) @ 25°C:29A (Tc)
Email:[email protected]

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