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SI6463BDQ-T1-GE3
- Part Number:
- SI6463BDQ-T1-GE3
- Manufacturer:
- Vishay / Siliconix
- Description:
- MOSFET P-CH 20V 6.2A 8-TSSOP
- Lead Free Status / RoHS Status:
- Lead free / RoHS Compliant
- Available Quantity:
- 14093 Pieces
- Data sheet:
- SI6463BDQ-T1-GE3.pdf
Introduction
Specifications
| Vgs(th) (Max) @ Id: | 800mV @ 250µA |
|---|---|
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | 8-TSSOP |
| Series: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 15 mOhm @ 7.4A, 4.5V |
| Power Dissipation (Max): | 1.05W (Ta) |
| Packaging: | Original-Reel® |
| Package / Case: | 8-TSSOP (0.173", 4.40mm Width) |
| Other Names: | SI6463BDQ-T1-GE3DKR |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Part Number: | SI6463BDQ-T1-GE3 |
| Input Capacitance (Ciss) (Max) @ Vds: | - |
| Gate Charge (Qg) (Max) @ Vgs: | 60nC @ 5V |
| FET Type: | P-Channel |
| FET Feature: | - |
| Expanded Description: | P-Channel 20V 6.2A (Ta) 1.05W (Ta) Surface Mount 8-TSSOP |
| Drain to Source Voltage (Vdss): | 20V |
| Description: | MOSFET P-CH 20V 6.2A 8-TSSOP |
| Current - Continuous Drain (Id) @ 25°C: | 6.2A (Ta) |
| Email: | [email protected] |
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