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R6035KNZ1C9
- Part Number:
- R6035KNZ1C9
- Manufacturer:
- LAPIS Semiconductor
- Description:
- NCH 600V 35A POWER MOSFET
- Lead Free Status / RoHS Status:
- Lead free / RoHS Compliant
- Available Quantity:
- 16100 Pieces
- Data sheet:
- R6035KNZ1C9.pdf
Introduction
Specifications
| Vgs(th) (Max) @ Id: | 5V @ 1mA |
|---|---|
| Vgs (Max): | ±20V |
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | TO-247 |
| Series: | - |
| Rds On (Max) @ Id, Vgs: | 102 mOhm @ 18.1A, 10V |
| Power Dissipation (Max): | 379W (Tc) |
| Packaging: | Tape & Reel (TR) |
| Package / Case: | TO-247-3 |
| Other Names: | R6035KNZ1C9TR R6035KNZ1C9TR-ND |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 17 Weeks |
| Manufacturer Part Number: | R6035KNZ1C9 |
| Input Capacitance (Ciss) (Max) @ Vds: | 3000pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 72nC @ 10V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Expanded Description: | N-Channel 600V 35A (Tc) 379W (Tc) Through Hole TO-247 |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Drain to Source Voltage (Vdss): | 600V |
| Description: | NCH 600V 35A POWER MOSFET |
| Current - Continuous Drain (Id) @ 25°C: | 35A (Tc) |
| Email: | [email protected] |
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