SI2337DS-T1-GE3
Part Number:
SI2337DS-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET P-CH 80V 2.2A SOT23-3
Lead Free Status / RoHS Status:
Lead free / RoHS Compliant
Available Quantity:
16614 Pieces
Data sheet:
SI2337DS-T1-GE3.pdf

Introduction

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Specifications

Vgs(th) (Max) @ Id:4V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:SOT-23-3 (TO-236)
Series:TrenchFET®
Rds On (Max) @ Id, Vgs:270 mOhm @ 1.2A, 10V
Power Dissipation (Max):760mW (Ta), 2.5W (Tc)
Packaging:Original-Reel®
Package / Case:TO-236-3, SC-59, SOT-23-3
Other Names:SI2337DS-T1-GE3DKR
Operating Temperature:-50°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:15 Weeks
Manufacturer Part Number:SI2337DS-T1-GE3
Input Capacitance (Ciss) (Max) @ Vds:500pF @ 40V
Gate Charge (Qg) (Max) @ Vgs:17nC @ 10V
FET Type:P-Channel
FET Feature:-
Expanded Description:P-Channel 80V 2.2A (Tc) 760mW (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Drain to Source Voltage (Vdss):80V
Description:MOSFET P-CH 80V 2.2A SOT23-3
Current - Continuous Drain (Id) @ 25°C:2.2A (Tc)
Email:[email protected]

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