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SI2333DS-T1-GE3
- Part Number:
- SI2333DS-T1-GE3
- Manufacturer:
- Vishay / Siliconix
- Description:
- MOSFET P-CH 12V 4.1A SOT23-3
- Lead Free Status / RoHS Status:
- Lead free / RoHS Compliant
- Available Quantity:
- 18293 Pieces
- Data sheet:
- SI2333DS-T1-GE3.pdf
Introduction
Specifications
| Vgs(th) (Max) @ Id: | 1V @ 250µA |
|---|---|
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | SOT-23-3 (TO-236) |
| Series: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 32 mOhm @ 5.3A, 4.5V |
| Power Dissipation (Max): | 750mW (Ta) |
| Packaging: | Tape & Reel (TR) |
| Package / Case: | TO-236-3, SC-59, SOT-23-3 |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 12 Weeks |
| Manufacturer Part Number: | SI2333DS-T1-GE3 |
| Input Capacitance (Ciss) (Max) @ Vds: | 1100pF @ 6V |
| Gate Charge (Qg) (Max) @ Vgs: | 18nC @ 4.5V |
| FET Type: | P-Channel |
| FET Feature: | - |
| Expanded Description: | P-Channel 12V 4.1A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236) |
| Drain to Source Voltage (Vdss): | 12V |
| Description: | MOSFET P-CH 12V 4.1A SOT23-3 |
| Current - Continuous Drain (Id) @ 25°C: | 4.1A (Ta) |
| Email: | [email protected] |
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