RQ3G100GNTB
Part Number:
RQ3G100GNTB
Manufacturer:
LAPIS Semiconductor
Description:
MOSFET N-CH 40V 10A TSMT
Lead Free Status / RoHS Status:
Lead free / RoHS Compliant
Available Quantity:
12115 Pieces
Data sheet:
RQ3G100GNTB.pdf

Introduction

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Specifications

Vgs(th) (Max) @ Id:2.5V @ 1mA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:8-HSMT (3.2x3)
Series:-
Rds On (Max) @ Id, Vgs:14.3 mOhm @ 10A, 10V
Power Dissipation (Max):2W (Ta)
Packaging:Tape & Reel (TR)
Package / Case:8-PowerVDFN
Other Names:RQ3G100GNTBTR
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:10 Weeks
Manufacturer Part Number:RQ3G100GNTB
Input Capacitance (Ciss) (Max) @ Vds:615pF @ 20V
Gate Charge (Qg) (Max) @ Vgs:8.4nC @ 10V
FET Type:N-Channel
FET Feature:-
Expanded Description:N-Channel 40V 10A (Ta) 2W (Ta) Surface Mount 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Drain to Source Voltage (Vdss):40V
Description:MOSFET N-CH 40V 10A TSMT
Current - Continuous Drain (Id) @ 25°C:10A (Ta)
Email:[email protected]

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