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IPI086N10N3GXKSA1
- Part Number:
- IPI086N10N3GXKSA1
- Manufacturer:
- International Rectifier (Infineon Technologies)
- Description:
- MOSFET N-CH 100V 80A TO262-3
- Lead Free Status / RoHS Status:
- Lead free / RoHS Compliant
- Available Quantity:
- 20660 Pieces
- Data sheet:
- IPI086N10N3GXKSA1.pdf
Introduction
Specifications
| Vgs(th) (Max) @ Id: | 3.5V @ 75µA |
|---|---|
| Vgs (Max): | ±20V |
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | PG-TO262-3 |
| Series: | OptiMOS™ |
| Rds On (Max) @ Id, Vgs: | 8.6 mOhm @ 73A, 10V |
| Power Dissipation (Max): | 125W (Tc) |
| Packaging: | Tube |
| Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Other Names: | IPI086N10N3 G IPI086N10N3 G-ND IPI086N10N3G SP000485982 SP000683070 |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Through Hole |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 14 Weeks |
| Manufacturer Part Number: | IPI086N10N3GXKSA1 |
| Input Capacitance (Ciss) (Max) @ Vds: | 3980pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs: | 55nC @ 10V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Expanded Description: | N-Channel 100V 80A (Tc) 125W (Tc) Through Hole PG-TO262-3 |
| Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
| Drain to Source Voltage (Vdss): | 100V |
| Description: | MOSFET N-CH 100V 80A TO262-3 |
| Current - Continuous Drain (Id) @ 25°C: | 80A (Tc) |
| Email: | [email protected] |
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