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IPD65R650CEATMA1
- Part Number:
- IPD65R650CEATMA1
- Manufacturer:
- International Rectifier (Infineon Technologies)
- Description:
- MOSFET N-CH 650V 10.1A TO252
- Lead Free Status / RoHS Status:
- Lead free / RoHS Compliant
- Available Quantity:
- 16414 Pieces
- Data sheet:
- IPD65R650CEATMA1.pdf
Introduction
Specifications
| Vgs(th) (Max) @ Id: | 3.5V @ 0.21mA |
|---|---|
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | PG-TO252-3 |
| Series: | CoolMOS™ |
| Rds On (Max) @ Id, Vgs: | 650 mOhm @ 2.1A, 10V |
| Power Dissipation (Max): | 86W (Tc) |
| Packaging: | Tape & Reel (TR) |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Other Names: | SP001295798 |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Part Number: | IPD65R650CEATMA1 |
| Input Capacitance (Ciss) (Max) @ Vds: | 440pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs: | 23nC @ 10V |
| FET Type: | N-Channel |
| FET Feature: | Super Junction |
| Expanded Description: | N-Channel 650V 10.1A (Tc) 86W (Tc) Surface Mount PG-TO252-3 |
| Drain to Source Voltage (Vdss): | 650V |
| Description: | MOSFET N-CH 650V 10.1A TO252 |
| Current - Continuous Drain (Id) @ 25°C: | 10.1A (Tc) |
| Email: | [email protected] |
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