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IPD65R600E6ATMA1
- Part Number:
- IPD65R600E6ATMA1
- Manufacturer:
- International Rectifier (Infineon Technologies)
- Description:
- MOSFET N-CH 650V 7.3A TO252-3
- Lead Free Status / RoHS Status:
- Lead free / RoHS Compliant
- Available Quantity:
- 15080 Pieces
- Data sheet:
- IPD65R600E6ATMA1.pdf
Introduction
Specifications
| Vgs(th) (Max) @ Id: | 3.5V @ 210µA |
|---|---|
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | PG-TO252-3 |
| Series: | CoolMOS™ E6 |
| Rds On (Max) @ Id, Vgs: | 600 mOhm @ 2.1A, 10V |
| Power Dissipation (Max): | 63W (Tc) |
| Packaging: | Tape & Reel (TR) |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Other Names: | SP001117096 |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 12 Weeks |
| Manufacturer Part Number: | IPD65R600E6ATMA1 |
| Input Capacitance (Ciss) (Max) @ Vds: | 440pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs: | 23nC @ 10V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Expanded Description: | N-Channel 650V 7.3A (Tc) 63W (Tc) Surface Mount PG-TO252-3 |
| Drain to Source Voltage (Vdss): | 650V |
| Description: | MOSFET N-CH 650V 7.3A TO252-3 |
| Current - Continuous Drain (Id) @ 25°C: | 7.3A (Tc) |
| Email: | [email protected] |
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