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APT65GP60B2G
- Part Number:
- APT65GP60B2G
- Manufacturer:
- Microsemi
- Description:
- IGBT 600V 100A 833W TMAX
- Lead Free Status / RoHS Status:
- Lead free / RoHS Compliant
- Available Quantity:
- 16613 Pieces
- Data sheet:
- APT65GP60B2G.pdf
Introduction
Specifications
| Voltage - Collector Emitter Breakdown (Max): | 600V |
|---|---|
| Vce(on) (Max) @ Vge, Ic: | 2.7V @ 15V, 65A |
| Test Condition: | 400V, 65A, 5 Ohm, 15V |
| Td (on/off) @ 25°C: | 30ns/91ns |
| Switching Energy: | 605µJ (on), 896µJ (off) |
| Series: | POWER MOS 7® |
| Power - Max: | 833W |
| Packaging: | Tube |
| Package / Case: | TO-247-3 Variant |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Part Number: | APT65GP60B2G |
| Input Type: | Standard |
| IGBT Type: | PT |
| Gate Charge: | 210nC |
| Expanded Description: | IGBT PT 600V 100A 833W Through Hole |
| Description: | IGBT 600V 100A 833W TMAX |
| Current - Collector Pulsed (Icm): | 250A |
| Current - Collector (Ic) (Max): | 100A |
| Email: | [email protected] |
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