TPC8018-H(TE12LQM)
Part Number:
TPC8018-H(TE12LQM)
Manufacturer:
Toshiba Semiconductor
Description:
MOSFET N-CH 30V 18A SOP8 2-6J1B
Lead Free Status / RoHS Status:
Lead free / RoHS Compliant
Available Quantity:
14414 Pieces
Data sheet:
1.TPC8018-H(TE12LQM).pdf2.TPC8018-H(TE12LQM).pdf

Introduction

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Specifications

Vgs(th) (Max) @ Id:2.3V @ 1mA
Technology:MOSFET (Metal Oxide)
Supplier Device Package:8-SOP (5.5x6.0)
Series:-
Rds On (Max) @ Id, Vgs:4.6 mOhm @ 9A, 10V
Power Dissipation (Max):1W (Ta)
Packaging:Tape & Reel (TR)
Package / Case:8-SOIC (0.173", 4.40mm Width)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Part Number:TPC8018-H(TE12LQM)
Input Capacitance (Ciss) (Max) @ Vds:2265pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:38nC @ 10V
FET Type:N-Channel
FET Feature:-
Expanded Description:N-Channel 30V 18A (Ta) 1W (Ta) Surface Mount 8-SOP (5.5x6.0)
Drain to Source Voltage (Vdss):30V
Description:MOSFET N-CH 30V 18A SOP8 2-6J1B
Current - Continuous Drain (Id) @ 25°C:18A (Ta)
Email:[email protected]

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