TPC8012-H(TE12L,Q)
Part Number:
TPC8012-H(TE12L,Q)
Manufacturer:
Toshiba Semiconductor
Description:
MOSFET N-CH 200V 1.8A 8-SOP
Lead Free Status / RoHS Status:
Lead free / RoHS Compliant
Available Quantity:
19475 Pieces
Data sheet:
1.TPC8012-H(TE12L,Q).pdf2.TPC8012-H(TE12L,Q).pdf

Introduction

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Specifications

Vgs(th) (Max) @ Id:5V @ 1mA
Technology:MOSFET (Metal Oxide)
Supplier Device Package:8-SOP (5.5x6.0)
Series:π-MOSV
Rds On (Max) @ Id, Vgs:400 mOhm @ 900mA, 10V
Power Dissipation (Max):1W (Ta)
Packaging:Original-Reel®
Package / Case:8-SOIC (0.173", 4.40mm Width)
Other Names:TPC8012-HDKR
TPC8012-HDKR-ND
TPC8012-HQDKR
TPC8012HTE12LQ
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Part Number:TPC8012-H(TE12L,Q)
Input Capacitance (Ciss) (Max) @ Vds:440pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:11nC @ 10V
FET Type:N-Channel
FET Feature:-
Expanded Description:N-Channel 200V 1.8A (Ta) 1W (Ta) Surface Mount 8-SOP (5.5x6.0)
Drain to Source Voltage (Vdss):200V
Description:MOSFET N-CH 200V 1.8A 8-SOP
Current - Continuous Drain (Id) @ 25°C:1.8A (Ta)
Email:[email protected]

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