SQ4850EY-T1_GE3
Part Number:
SQ4850EY-T1_GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET N-CH 60V 12A 8SOIC
Lead Free Status / RoHS Status:
Lead free / RoHS Compliant
Available Quantity:
19357 Pieces
Data sheet:
SQ4850EY-T1_GE3.pdf

Introduction

BYCHIPS is the stocking distributor for SQ4850EY-T1_GE3, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for SQ4850EY-T1_GE3 by email, we will give you a best price according your plan.
Buy SQ4850EY-T1_GE3 with BYCHPS
Buy with guarantee

Specifications

Vgs(th) (Max) @ Id:2.5V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:8-SO
Series:Automotive, AEC-Q101, TrenchFET®
Rds On (Max) @ Id, Vgs:22 mOhm @ 6A, 5V
Power Dissipation (Max):6.8W (Tc)
Packaging:Tape & Reel (TR)
Package / Case:8-SOIC (0.154", 3.90mm Width)
Other Names:SQ4850EY-T1-GE3
SQ4850EY-T1-GE3-ND
SQ4850EY-T1_GE3-ND
SQ4850EY-T1_GE3TR
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:18 Weeks
Manufacturer Part Number:SQ4850EY-T1_GE3
Input Capacitance (Ciss) (Max) @ Vds:1250pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:30nC @ 10V
FET Type:N-Channel
FET Feature:-
Expanded Description:N-Channel 60V 12A (Tc) 6.8W (Tc) Surface Mount 8-SO
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Drain to Source Voltage (Vdss):60V
Description:MOSFET N-CH 60V 12A 8SOIC
Current - Continuous Drain (Id) @ 25°C:12A (Tc)
Email:[email protected]

Quick Request Quote

Part Number
Quantity
Company
E-mail
Phone
Comments