IPB123N10N3 G
IPB123N10N3 G
Part Number:
IPB123N10N3 G
Manufacturer:
International Rectifier (Infineon Technologies)
Description:
MOSFET N-CH 100V 58A TO263-3
Lead Free Status / RoHS Status:
Lead free / RoHS Compliant
Available Quantity:
15991 Pieces
Data sheet:
IPB123N10N3 G.pdf

Introduction

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Specifications

Vgs(th) (Max) @ Id:3.5V @ 46µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PG-TO263-2
Series:OptiMOS™
Rds On (Max) @ Id, Vgs:12.3 mOhm @ 46A, 10V
Power Dissipation (Max):94W (Tc)
Packaging:Tape & Reel (TR)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Other Names:IPB123N10N3 G-ND
IPB123N10N3 GTR
IPB123N10N3G
IPB123N10N3GATMA1
SP000485968
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:12 Weeks
Manufacturer Part Number:IPB123N10N3 G
Input Capacitance (Ciss) (Max) @ Vds:2500pF @ 50V
Gate Charge (Qg) (Max) @ Vgs:35nC @ 10V
FET Type:N-Channel
FET Feature:-
Expanded Description:N-Channel 100V 58A (Tc) 94W (Tc) Surface Mount PG-TO263-2
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Drain to Source Voltage (Vdss):100V
Description:MOSFET N-CH 100V 58A TO263-3
Current - Continuous Drain (Id) @ 25°C:58A (Tc)
Email:[email protected]

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