SQ2303ES-T1_GE3
Part Number:
SQ2303ES-T1_GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET P-CHAN 30V SOT23
Lead Free Status / RoHS Status:
Lead free / RoHS Compliant
Available Quantity:
19682 Pieces
Data sheet:
SQ2303ES-T1_GE3.pdf

Introduction

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Specifications

Vgs(th) (Max) @ Id:2.5V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-236 (SOT-23)
Series:Automotive, AEC-Q101, TrenchFET®
Rds On (Max) @ Id, Vgs:170 mOhm @ 1.8A, 10V
Power Dissipation (Max):1.9W (Tc)
Packaging:Tape & Reel (TR)
Package / Case:TO-236-3, SC-59, SOT-23-3
Other Names:SQ2303ES-T1_GE3TR
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:18 Weeks
Manufacturer Part Number:SQ2303ES-T1_GE3
Input Capacitance (Ciss) (Max) @ Vds:210pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:6.8nC @ 10V
FET Type:P-Channel
FET Feature:-
Expanded Description:P-Channel 30V 2.5A (Tc) 1.9W (Tc) Surface Mount TO-236 (SOT-23)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Drain to Source Voltage (Vdss):30V
Description:MOSFET P-CHAN 30V SOT23
Current - Continuous Drain (Id) @ 25°C:2.5A (Tc)
Email:[email protected]

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