SQ2301ES-T1_GE3
Part Number:
SQ2301ES-T1_GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET P-CH 20V 3.9A SOT23-3
Lead Free Status / RoHS Status:
Lead free / RoHS Compliant
Available Quantity:
13145 Pieces
Data sheet:
SQ2301ES-T1_GE3.pdf

Introduction

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Specifications

Vgs(th) (Max) @ Id:1.5V @ 250µA
Vgs (Max):±8V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-236 (SOT-23)
Series:Automotive, AEC-Q101, TrenchFET®
Rds On (Max) @ Id, Vgs:120 mOhm @ 2.8A, 4.5V
Power Dissipation (Max):3W (Tc)
Packaging:Tape & Reel (TR)
Package / Case:TO-236-3, SC-59, SOT-23-3
Other Names:SQ2301ES-T1_GE3TR
Operating Temperature:-55°C ~ 175°C (TA)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:18 Weeks
Manufacturer Part Number:SQ2301ES-T1_GE3
Input Capacitance (Ciss) (Max) @ Vds:425pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:8nC @ 4.5V
FET Type:P-Channel
FET Feature:-
Expanded Description:P-Channel 20V 3.9A (Tc) 3W (Tc) Surface Mount TO-236 (SOT-23)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Drain to Source Voltage (Vdss):20V
Description:MOSFET P-CH 20V 3.9A SOT23-3
Current - Continuous Drain (Id) @ 25°C:3.9A (Tc)
Email:[email protected]

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