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SIHH21N65E-T1-GE3
- Part Number:
- SIHH21N65E-T1-GE3
- Manufacturer:
- Vishay / Siliconix
- Description:
- MOSFET N-CH 650V 20.3A PWRPAK8X8
- Lead Free Status / RoHS Status:
- Lead free / RoHS Compliant
- Available Quantity:
- 16443 Pieces
- Data sheet:
- SIHH21N65E-T1-GE3.pdf
Introduction
Specifications
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
|---|---|
| Vgs (Max): | ±30V |
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | PowerPAK® 8 x 8 |
| Series: | - |
| Rds On (Max) @ Id, Vgs: | 170 mOhm @ 11A, 10V |
| Power Dissipation (Max): | 156W (Tc) |
| Packaging: | Tape & Reel (TR) |
| Package / Case: | 8-PowerTDFN |
| Other Names: | SIHH21N65E-T1-GE3TR |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 20 Weeks |
| Manufacturer Part Number: | SIHH21N65E-T1-GE3 |
| Input Capacitance (Ciss) (Max) @ Vds: | 2404pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs: | 99nC @ 10V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Expanded Description: | N-Channel 650V 20.3A (Tc) 156W (Tc) Surface Mount PowerPAK® 8 x 8 |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Drain to Source Voltage (Vdss): | 650V |
| Description: | MOSFET N-CH 650V 20.3A PWRPAK8X8 |
| Current - Continuous Drain (Id) @ 25°C: | 20.3A (Tc) |
| Email: | [email protected] |
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