SIHH20N50E-T1-GE3
SIHH20N50E-T1-GE3
Part Number:
SIHH20N50E-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET N-CH 500V 22A PWRPAK 8X8
Lead Free Status / RoHS Status:
Lead free / RoHS Compliant
Available Quantity:
16278 Pieces
Data sheet:
SIHH20N50E-T1-GE3.pdf

Introduction

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Specifications

Vgs(th) (Max) @ Id:4V @ 250µA
Vgs (Max):±30V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PowerPAK® 8 x 8
Series:E
Rds On (Max) @ Id, Vgs:147 mOhm @ 10A, 10V
Power Dissipation (Max):174W (Tc)
Packaging:Cut Tape (CT)
Package / Case:8-PowerTDFN
Other Names:SIHH20N50E-T1-GE3CT
SIHH20N50E-T1-GE3CT-ND
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:20 Weeks
Manufacturer Part Number:SIHH20N50E-T1-GE3
Input Capacitance (Ciss) (Max) @ Vds:2063pF @ 100V
Gate Charge (Qg) (Max) @ Vgs:84nC @ 10V
FET Type:N-Channel
FET Feature:-
Expanded Description:N-Channel 500V 22A (Tc) 174W (Tc) Surface Mount PowerPAK® 8 x 8
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):500V
Description:MOSFET N-CH 500V 22A PWRPAK 8X8
Current - Continuous Drain (Id) @ 25°C:22A (Tc)
Email:[email protected]

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