SIE820DF-T1-GE3
SIE820DF-T1-GE3
Part Number:
SIE820DF-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET N-CH 20V 50A POLARPAK
Lead Free Status / RoHS Status:
Lead free / RoHS Compliant
Available Quantity:
17455 Pieces
Data sheet:
SIE820DF-T1-GE3.pdf

Introduction

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Specifications

Vgs(th) (Max) @ Id:2V @ 250µA
Technology:MOSFET (Metal Oxide)
Supplier Device Package:10-PolarPAK® (S)
Series:TrenchFET®
Rds On (Max) @ Id, Vgs:3.5 mOhm @ 18A, 4.5V
Power Dissipation (Max):5.2W (Ta), 104W (Tc)
Packaging:Cut Tape (CT)
Package / Case:10-PolarPAK® (S)
Other Names:SIE820DF-T1-GE3CT
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Part Number:SIE820DF-T1-GE3
Input Capacitance (Ciss) (Max) @ Vds:4300pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:143nC @ 10V
FET Type:N-Channel
FET Feature:-
Expanded Description:N-Channel 20V 50A (Tc) 5.2W (Ta), 104W (Tc) Surface Mount 10-PolarPAK® (S)
Drain to Source Voltage (Vdss):20V
Description:MOSFET N-CH 20V 50A POLARPAK
Current - Continuous Drain (Id) @ 25°C:50A (Tc)
Email:[email protected]

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