SI2335DS-T1-GE3
Part Number:
SI2335DS-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET P-CH 12V 3.2A SOT23-3
Lead Free Status / RoHS Status:
Lead free / RoHS Compliant
Available Quantity:
14022 Pieces
Data sheet:
SI2335DS-T1-GE3.pdf

Introduction

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Specifications

Vgs(th) (Max) @ Id:450mV @ 250µA (Min)
Technology:MOSFET (Metal Oxide)
Supplier Device Package:SOT-23-3 (TO-236)
Series:TrenchFET®
Rds On (Max) @ Id, Vgs:51 mOhm @ 4A, 4.5V
Power Dissipation (Max):750mW (Ta)
Packaging:Tape & Reel (TR)
Package / Case:TO-236-3, SC-59, SOT-23-3
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Part Number:SI2335DS-T1-GE3
Input Capacitance (Ciss) (Max) @ Vds:1225pF @ 6V
Gate Charge (Qg) (Max) @ Vgs:15nC @ 4.5V
FET Type:P-Channel
FET Feature:-
Expanded Description:P-Channel 12V 3.2A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)
Drain to Source Voltage (Vdss):12V
Description:MOSFET P-CH 12V 3.2A SOT23-3
Current - Continuous Drain (Id) @ 25°C:3.2A (Ta)
Email:[email protected]

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