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SI2309DS-T1-E3
- Part Number:
- SI2309DS-T1-E3
- Manufacturer:
- Vishay / Siliconix
- Description:
- MOSFET P-CH 60V 1.25A SOT23-3
- Lead Free Status / RoHS Status:
- Lead free / RoHS Compliant
- Available Quantity:
- 19910 Pieces
- Data sheet:
- SI2309DS-T1-E3.pdf
Introduction
Specifications
| Vgs(th) (Max) @ Id: | 1V @ 250µA (Min) |
|---|---|
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | SOT-23-3 (TO-236) |
| Series: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 340 mOhm @ 1.25A, 10V |
| Power Dissipation (Max): | 1.25W (Ta) |
| Packaging: | Tape & Reel (TR) |
| Package / Case: | TO-236-3, SC-59, SOT-23-3 |
| Other Names: | SI2309DS-T1-E3TR |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Part Number: | SI2309DS-T1-E3 |
| Input Capacitance (Ciss) (Max) @ Vds: | - |
| Gate Charge (Qg) (Max) @ Vgs: | 12nC @ 10V |
| FET Type: | P-Channel |
| FET Feature: | - |
| Expanded Description: | P-Channel 60V 1.25W (Ta) Surface Mount SOT-23-3 (TO-236) |
| Drain to Source Voltage (Vdss): | 60V |
| Description: | MOSFET P-CH 60V 1.25A SOT23-3 |
| Current - Continuous Drain (Id) @ 25°C: | - |
| Email: | [email protected] |
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