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SI2304DDS-T1-GE3
- Part Number:
- SI2304DDS-T1-GE3
- Manufacturer:
- Vishay / Siliconix
- Description:
- MOSFET N-CH 30V 3.3A SOT23
- Lead Free Status / RoHS Status:
- Lead free / RoHS Compliant
- Available Quantity:
- 17053 Pieces
- Data sheet:
- SI2304DDS-T1-GE3.pdf
Introduction
Specifications
| Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
|---|---|
| Vgs (Max): | ±20V |
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | SOT-23-3 (TO-236) |
| Series: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 60 mOhm @ 3.2A, 10V |
| Power Dissipation (Max): | 1.1W (Ta), 1.7W (Tc) |
| Packaging: | Tape & Reel (TR) |
| Package / Case: | TO-236-3, SC-59, SOT-23-3 |
| Other Names: | SI2304DDS-T1-GE3-ND SI2304DDS-T1-GE3TR SI2304DDST1GE3 |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 24 Weeks |
| Manufacturer Part Number: | SI2304DDS-T1-GE3 |
| Input Capacitance (Ciss) (Max) @ Vds: | 235pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs: | 6.7nC @ 10V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Expanded Description: | N-Channel 30V 3.3A (Ta), 3.6A (Tc) 1.1W (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236) |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Drain to Source Voltage (Vdss): | 30V |
| Description: | MOSFET N-CH 30V 3.3A SOT23 |
| Current - Continuous Drain (Id) @ 25°C: | 3.3A (Ta), 3.6A (Tc) |
| Email: | [email protected] |
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