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SCT2H12NYTB
- Part Number:
- SCT2H12NYTB
- Manufacturer:
- LAPIS Semiconductor
- Description:
- 1700V 1.2 OHM 4A SIC FET
- Lead Free Status / RoHS Status:
- Lead free / RoHS Compliant
- Available Quantity:
- 17087 Pieces
- Data sheet:
- SCT2H12NYTB.pdf
Introduction
Specifications
| Vgs(th) (Max) @ Id: | 4V @ 410µA |
|---|---|
| Vgs (Max): | +22V, -6V |
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | TO-268 |
| Series: | - |
| Rds On (Max) @ Id, Vgs: | 1.5 Ohm @ 1.1A, 18V |
| Power Dissipation (Max): | 44W (Tc) |
| Packaging: | Original-Reel® |
| Package / Case: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
| Other Names: | SCT2H12NYTBDKR |
| Operating Temperature: | 175°C (TJ) |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 15 Weeks |
| Manufacturer Part Number: | SCT2H12NYTB |
| Input Capacitance (Ciss) (Max) @ Vds: | 184pF @ 800V |
| Gate Charge (Qg) (Max) @ Vgs: | 14nC @ 18V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Expanded Description: | N-Channel 1700V (1.7kV) 4A (Tc) 44W (Tc) Surface Mount TO-268 |
| Drive Voltage (Max Rds On, Min Rds On): | 18V |
| Drain to Source Voltage (Vdss): | 1700V (1.7kV) |
| Description: | 1700V 1.2 OHM 4A SIC FET |
| Current - Continuous Drain (Id) @ 25°C: | 4A (Tc) |
| Email: | [email protected] |
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