SI2316BDS-T1-E3
Part Number:
SI2316BDS-T1-E3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET N-CH 30V 4.5A SOT-23
Lead Free Status / RoHS Status:
Lead free / RoHS Compliant
Available Quantity:
16223 Pieces
Data sheet:
SI2316BDS-T1-E3.pdf

Introduction

BYCHIPS is the stocking distributor for SI2316BDS-T1-E3, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for SI2316BDS-T1-E3 by email, we will give you a best price according your plan.
Buy SI2316BDS-T1-E3 with BYCHPS
Buy with guarantee

Specifications

Vgs(th) (Max) @ Id:3V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:SOT-23-3 (TO-236)
Series:TrenchFET®
Rds On (Max) @ Id, Vgs:50 mOhm @ 3.9A, 10V
Power Dissipation (Max):1.25W (Ta), 1.66W (Tc)
Packaging:Tape & Reel (TR)
Package / Case:TO-236-3, SC-59, SOT-23-3
Other Names:SI2316BDS-T1-E3-ND
SI2316BDS-T1-E3TR
SI2316BDST1E3
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:16 Weeks
Manufacturer Part Number:SI2316BDS-T1-E3
Input Capacitance (Ciss) (Max) @ Vds:350pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:9.6nC @ 10V
FET Type:N-Channel
FET Feature:-
Expanded Description:N-Channel 30V 4.5A (Tc) 1.25W (Ta), 1.66W (Tc) Surface Mount SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Drain to Source Voltage (Vdss):30V
Description:MOSFET N-CH 30V 4.5A SOT-23
Current - Continuous Drain (Id) @ 25°C:4.5A (Tc)
Email:[email protected]

Quick Request Quote

Part Number
Quantity
Company
E-mail
Phone
Comments