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RND030N20TL
- Part Number:
- RND030N20TL
- Manufacturer:
- LAPIS Semiconductor
- Description:
- MOSFET N-CH 200V 3A CPT3
- Lead Free Status / RoHS Status:
- Lead free / RoHS Compliant
- Available Quantity:
- 17528 Pieces
- Data sheet:
- RND030N20TL.pdf
Introduction
Specifications
| Vgs(th) (Max) @ Id: | 5.2V @ 1mA |
|---|---|
| Vgs (Max): | ±30V |
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | CPT3 |
| Series: | - |
| Rds On (Max) @ Id, Vgs: | 870 mOhm @ 1.5A, 10V |
| Power Dissipation (Max): | 850mW (Ta), 20W (Tc) |
| Packaging: | Tape & Reel (TR) |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Other Names: | RND030N20TLTR |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 17 Weeks |
| Manufacturer Part Number: | RND030N20TL |
| Input Capacitance (Ciss) (Max) @ Vds: | 270pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 6.7nC @ 10V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Expanded Description: | N-Channel 200V 3A (Tc) 850mW (Ta), 20W (Tc) Surface Mount CPT3 |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Drain to Source Voltage (Vdss): | 200V |
| Description: | MOSFET N-CH 200V 3A CPT3 |
| Current - Continuous Drain (Id) @ 25°C: | 3A (Tc) |
| Email: | [email protected] |
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