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IXFT18N100Q3
- Part Number:
- IXFT18N100Q3
- Manufacturer:
- IXYS Corporation
- Description:
- MOSFET N-CH 1000V 18A TO-268
- Lead Free Status / RoHS Status:
- Lead free / RoHS Compliant
- Available Quantity:
- 17932 Pieces
- Data sheet:
- IXFT18N100Q3.pdf
Introduction
Specifications
| Vgs(th) (Max) @ Id: | 6.5V @ 4mA |
|---|---|
| Vgs (Max): | ±30V |
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | TO-268 |
| Series: | HiPerFET™ |
| Rds On (Max) @ Id, Vgs: | 660 mOhm @ 9A, 10V |
| Power Dissipation (Max): | 830W (Tc) |
| Packaging: | Tube |
| Package / Case: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 8 Weeks |
| Manufacturer Part Number: | IXFT18N100Q3 |
| Input Capacitance (Ciss) (Max) @ Vds: | 4890pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 90nC @ 10V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Expanded Description: | N-Channel 1000V (1kV) 18A (Tc) 830W (Tc) Surface Mount TO-268 |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Drain to Source Voltage (Vdss): | 1000V (1kV) |
| Description: | MOSFET N-CH 1000V 18A TO-268 |
| Current - Continuous Drain (Id) @ 25°C: | 18A (Tc) |
| Email: | [email protected] |
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