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NDD60N550U1-1G
- Part Number:
- NDD60N550U1-1G
- Manufacturer:
- AMI Semiconductor / ON Semiconductor
- Description:
- MOSFET N-CH 600V 8.2A IPAK-4
- Lead Free Status / RoHS Status:
- Lead free / RoHS Compliant
- Available Quantity:
- 15333 Pieces
- Data sheet:
- NDD60N550U1-1G.pdf
Introduction
Specifications
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
|---|---|
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | IPAK (TO-251) |
| Series: | - |
| Rds On (Max) @ Id, Vgs: | 550 mOhm @ 4A, 10V |
| Power Dissipation (Max): | 94W (Tc) |
| Packaging: | Tube |
| Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Moisture Sensitivity Level (MSL): | 3 (168 Hours) |
| Manufacturer Standard Lead Time: | 12 Weeks |
| Manufacturer Part Number: | NDD60N550U1-1G |
| Input Capacitance (Ciss) (Max) @ Vds: | 540pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs: | 18nC @ 10V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Expanded Description: | N-Channel 600V 8.2A (Tc) 94W (Tc) Through Hole IPAK (TO-251) |
| Drain to Source Voltage (Vdss): | 600V |
| Description: | MOSFET N-CH 600V 8.2A IPAK-4 |
| Current - Continuous Drain (Id) @ 25°C: | 8.2A (Tc) |
| Email: | [email protected] |
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