NDD60N360U1-35G
NDD60N360U1-35G
Part Number:
NDD60N360U1-35G
Manufacturer:
AMI Semiconductor / ON Semiconductor
Description:
MOSFET N-CH 600V 114A IPAK
Lead Free Status / RoHS Status:
Lead free / RoHS Compliant
Available Quantity:
15398 Pieces
Data sheet:
NDD60N360U1-35G.pdf

Introduction

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Specifications

Vgs(th) (Max) @ Id:4V @ 250µA
Technology:MOSFET (Metal Oxide)
Supplier Device Package:I-Pak
Series:-
Rds On (Max) @ Id, Vgs:360 mOhm @ 5.5A, 10V
Power Dissipation (Max):114W (Tc)
Packaging:Tube
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:6 Weeks
Manufacturer Part Number:NDD60N360U1-35G
Input Capacitance (Ciss) (Max) @ Vds:790pF @ 50V
Gate Charge (Qg) (Max) @ Vgs:26nC @ 10V
FET Type:N-Channel
FET Feature:-
Expanded Description:N-Channel 600V 11A (Tc) 114W (Tc) Through Hole I-Pak
Drain to Source Voltage (Vdss):600V
Description:MOSFET N-CH 600V 114A IPAK
Current - Continuous Drain (Id) @ 25°C:11A (Tc)
Email:[email protected]

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