IRFD123PBF
IRFD123PBF
Part Number:
IRFD123PBF
Manufacturer:
Vishay / Siliconix
Description:
MOSFET N-CH 100V 1.3A 4-DIP
Lead Free Status / RoHS Status:
Lead free / RoHS Compliant
Available Quantity:
16714 Pieces
Data sheet:
IRFD123PBF.pdf

Introduction

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Specifications

Vgs(th) (Max) @ Id:4V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:4-DIP, Hexdip, HVMDIP
Series:-
Rds On (Max) @ Id, Vgs:270 mOhm @ 780mA, 10V
Power Dissipation (Max):1.3W (Ta)
Packaging:Tube
Package / Case:4-DIP (0.300", 7.62mm)
Other Names:*IRFD123PBF
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:12 Weeks
Manufacturer Part Number:IRFD123PBF
Input Capacitance (Ciss) (Max) @ Vds:360pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:16nC @ 10V
FET Type:N-Channel
FET Feature:-
Expanded Description:N-Channel 100V 1.3A (Ta) 1.3W (Ta) Through Hole 4-DIP, Hexdip, HVMDIP
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):100V
Description:MOSFET N-CH 100V 1.3A 4-DIP
Current - Continuous Drain (Id) @ 25°C:1.3A (Ta)
Email:[email protected]

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