IRFD113
Part Number:
IRFD113
Manufacturer:
Vishay / Siliconix
Description:
MOSFET N-CH 60V 800MA 4-DIP
Lead Free Status / RoHS Status:
Contains lead / RoHS non-compliant
Available Quantity:
15542 Pieces
Data sheet:
IRFD113.pdf

Introduction

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Specifications

Vgs(th) (Max) @ Id:4V @ 250µA
Technology:MOSFET (Metal Oxide)
Supplier Device Package:4-HVMDIP
Series:-
Rds On (Max) @ Id, Vgs:800 mOhm @ 800mA, 10V
Power Dissipation (Max):1W (Tc)
Packaging:Tape & Reel (TR)
Package / Case:4-DIP (0.300", 7.62mm)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Part Number:IRFD113
Input Capacitance (Ciss) (Max) @ Vds:200pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:7nC @ 10V
FET Type:N-Channel
FET Feature:-
Expanded Description:N-Channel 60V 800mA (Tc) 1W (Tc) Through Hole 4-HVMDIP
Drain to Source Voltage (Vdss):60V
Description:MOSFET N-CH 60V 800MA 4-DIP
Current - Continuous Drain (Id) @ 25°C:800mA (Tc)
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