IPB039N10N3 G
IPB039N10N3 G
Part Number:
IPB039N10N3 G
Manufacturer:
International Rectifier (Infineon Technologies)
Description:
MOSFET N-CH 100V 160A TO263-7
Lead Free Status / RoHS Status:
Lead free / RoHS Compliant
Available Quantity:
18560 Pieces
Data sheet:
IPB039N10N3 G.pdf

Introduction

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Specifications

Vgs(th) (Max) @ Id:3.5V @ 160µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PG-TO263-7
Series:OptiMOS™
Rds On (Max) @ Id, Vgs:3.9 mOhm @ 100A, 10V
Power Dissipation (Max):214W (Tc)
Packaging:Tape & Reel (TR)
Package / Case:TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
Other Names:IPB039N10N3 G-ND
IPB039N10N3 GTR
IPB039N10N3G
IPB039N10N3GATMA1
SP000482428
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:12 Weeks
Manufacturer Part Number:IPB039N10N3 G
Input Capacitance (Ciss) (Max) @ Vds:8410pF @ 50V
Gate Charge (Qg) (Max) @ Vgs:117nC @ 10V
FET Type:N-Channel
FET Feature:-
Expanded Description:N-Channel 100V 160A (Tc) 214W (Tc) Surface Mount PG-TO263-7
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Drain to Source Voltage (Vdss):100V
Description:MOSFET N-CH 100V 160A TO263-7
Current - Continuous Drain (Id) @ 25°C:160A (Tc)
Email:[email protected]

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