IPB036N12N3 G
IPB036N12N3 G
Part Number:
IPB036N12N3 G
Manufacturer:
International Rectifier (Infineon Technologies)
Description:
MOSFET N-CH 120V 180A TO263-7
Lead Free Status / RoHS Status:
Lead free / RoHS Compliant
Available Quantity:
15338 Pieces
Data sheet:
IPB036N12N3 G.pdf

Introduction

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Specifications

Vgs(th) (Max) @ Id:4V @ 270µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PG-TO263-7
Series:OptiMOS™
Rds On (Max) @ Id, Vgs:3.6 mOhm @ 100A, 10V
Power Dissipation (Max):300W (Tc)
Packaging:Tape & Reel (TR)
Package / Case:TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
Other Names:IPB036N12N3 G-ND
IPB036N12N3 GTR
IPB036N12N3G
IPB036N12N3GATMA1
SP000675204
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:12 Weeks
Manufacturer Part Number:IPB036N12N3 G
Input Capacitance (Ciss) (Max) @ Vds:13800pF @ 60V
Gate Charge (Qg) (Max) @ Vgs:211nC @ 10V
FET Type:N-Channel
FET Feature:-
Expanded Description:N-Channel 120V 180A (Tc) 300W (Tc) Surface Mount PG-TO263-7
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):120V
Description:MOSFET N-CH 120V 180A TO263-7
Current - Continuous Drain (Id) @ 25°C:180A (Tc)
Email:[email protected]

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