BYCHIPS is the stocking distributor for EPC2101ENGRT, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for EPC2101ENGRT by email, we will give you a best price according your plan.
Buy EPC2101ENGRT with BYCHPS
Buy with guarantee
EPC2101ENGRT
- Part Number:
- EPC2101ENGRT
- Manufacturer:
- EPC
- Description:
- TRANS GAN ASYMMETRICAL HALF BRID
- Lead Free Status / RoHS Status:
- Lead free / RoHS Compliant
- Available Quantity:
- 12858 Pieces
- Data sheet:
- EPC2101ENGRT.pdf
Introduction
Specifications
| Vgs(th) (Max) @ Id: | 2.5V @ 2mA |
|---|---|
| Supplier Device Package: | Die |
| Series: | eGaN® |
| Rds On (Max) @ Id, Vgs: | 11.5 mOhm @ 20A, 5V |
| Power - Max: | - |
| Packaging: | Tape & Reel (TR) |
| Package / Case: | Die |
| Other Names: | 917-EPC2101ENGRTR |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 22 Weeks |
| Manufacturer Part Number: | EPC2101ENGRT |
| Input Capacitance (Ciss) (Max) @ Vds: | 300pF @ 30V |
| Gate Charge (Qg) (Max) @ Vgs: | 2.7nC @ 5V |
| FET Type: | 2 N-Channel (Half Bridge) |
| FET Feature: | GaNFET (Gallium Nitride) |
| Expanded Description: | Mosfet Array 2 N-Channel (Half Bridge) 60V 9.5A, 38A Surface Mount Die |
| Drain to Source Voltage (Vdss): | 60V |
| Description: | TRANS GAN ASYMMETRICAL HALF BRID |
| Current - Continuous Drain (Id) @ 25°C: | 9.5A, 38A |
| Email: | [email protected] |
Related parts for EPC2101ENGRT
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
 |
EPC2103ENG | EPC | TRANS GAN 2N-CH 80V BUMPED DIE | Inquiry |
 |
EPC2100ENGRT | EPC | MOSFET ARRAY 2N-CH 30V DIE | Inquiry |
|
EPC2104ENG | EPC | TRANS GAN 2N-CH 100V BUMPED DIE | Inquiry |
 |
EPC2108ENGRT | EPC | TRANS GAN 3N-CH BUMPED DIE | Inquiry |
|
EPC2100ENG | EPC | TRANS GAN 2N-CH 30V BUMPED DIE | Inquiry |
|
EPC2102ENGRT | EPC | MOSFET ARRAY 2N-CH 60V DIE | Inquiry |
|
EPC2102ENG | EPC | TRANS GAN 2N-CH 60V BUMPED DIE | Inquiry |
 |
EPC2106ENGRT | EPC | TRANS GAN 2N-CH 100V BUMPED DIE | Inquiry |
|
EPC2105ENGRT | EPC | MOSFET 2NCH 80V 9.5A DIE | Inquiry |
|
EPC2105ENG | EPC | TRANS GAN 2N-CH 80V BUMPED DIE | Inquiry |
|
EPC2101ENG | EPC | TRANS GAN 2N-CH 60V BUMPED DIE | Inquiry |
|
EPC2107ENGRT | EPC | TRANS GAN 3N-CH 100V BUMPED DIE | Inquiry |
 |
EPC2110ENGRT | EPC | TRANS GAN 2N-CH 120V BUMPED DIE | Inquiry |
|
EPC2104ENGRT | EPC | MOSFET 2NCH 100V 23A DIE | Inquiry |
|
EPC2103ENGRT | EPC | TRANS GAN SYM HALF BRDG 80V | Inquiry |
Latest News
- Xilinx Ships Industry's First 16nm All Programmable MPSoC Ahead of Schedule
- Xilinx and Samsung Jointly Enable the World's First 5G NR Commercial Deployment
- TI to reduce costs in Wireless business; OMAP™ processors and wireless connectivity solutions will focus on embedded markets
- TI's Peter Balyta to head Education Technology division; Melendy Lovett to retire
- Janet Clark to join TI board of directors
- TI unveils DLP® 0.66-inch 4K ultra-high definition (UHD) chip, enabling more affordable large screen projection displays for home, business and education
- GCHQ Director calls for international cyber pact
- Embedded World: Arm introduces fourth security element to PSA
- Last chance: Nominate BrightSparks before 28 February
- Embedded World 2019: Get the full Electronics Weekly Guide
- "Xcell Journal" Special Edition: Xilinx Customers Shape a Brilliant Future
- Xilinx Launches Public Access of the SDSoC Development Environment to Expand Zynq SoC User Base to Broad Community of Systems and Software Engineers