C2M0080120D
C2M0080120D
Part Number:
C2M0080120D
Manufacturer:
Cree
Description:
MOSFET N-CH 1200V 31.6A TO247
Lead Free Status / RoHS Status:
Lead free / RoHS Compliant
Available Quantity:
18650 Pieces
Data sheet:
C2M0080120D.pdf

Introduction

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Specifications

Vgs(th) (Max) @ Id:4V @ 5mA
Vgs (Max):+25V, -10V
Technology:SiCFET (Silicon Carbide)
Supplier Device Package:TO-247-3
Series:C2M™
Rds On (Max) @ Id, Vgs:98 mOhm @ 20A, 20V
Power Dissipation (Max):192W (Tc)
Packaging:Bulk
Package / Case:TO-247-3
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:8 Weeks
Manufacturer Part Number:C2M0080120D
Input Capacitance (Ciss) (Max) @ Vds:950pF @ 1000V
Gate Charge (Qg) (Max) @ Vgs:62nC @ 5V
FET Type:N-Channel
FET Feature:-
Expanded Description:N-Channel 1200V (1.2kV) 36A (Tc) 192W (Tc) Through Hole TO-247-3
Drive Voltage (Max Rds On, Min Rds On):20V
Drain to Source Voltage (Vdss):1200V (1.2kV)
Description:MOSFET N-CH 1200V 31.6A TO247
Current - Continuous Drain (Id) @ 25°C:36A (Tc)
Email:[email protected]

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