STI23NM60ND
STI23NM60ND
Part Number:
STI23NM60ND
Manufacturer:
ST
Description:
MOSFET N-CH 600V 19.5A I2PAK
Lead Free Status / RoHS Status:
Lead free / RoHS Compliant
Available Quantity:
19242 Pieces
Data sheet:
STI23NM60ND.pdf

Introduction

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Specifications

Vgs(th) (Max) @ Id:5V @ 250µA
Technology:MOSFET (Metal Oxide)
Supplier Device Package:I2PAK
Series:FDmesh™ II
Rds On (Max) @ Id, Vgs:180 mOhm @ 10A, 10V
Power Dissipation (Max):150W (Tc)
Packaging:Tube
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Part Number:STI23NM60ND
Input Capacitance (Ciss) (Max) @ Vds:2050pF @ 50V
Gate Charge (Qg) (Max) @ Vgs:70nC @ 10V
FET Type:N-Channel
FET Feature:-
Expanded Description:N-Channel 600V 19.5A (Tc) 150W (Tc) Through Hole I2PAK
Drain to Source Voltage (Vdss):600V
Description:MOSFET N-CH 600V 19.5A I2PAK
Current - Continuous Drain (Id) @ 25°C:19.5A (Tc)
Email:[email protected]

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