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SQ2362ES-T1_GE3
- Part Number:
- SQ2362ES-T1_GE3
- Manufacturer:
- Vishay / Siliconix
- Description:
- MOSFET N-CH 60V 4.4A TO236
- Lead Free Status / RoHS Status:
- Lead free / RoHS Compliant
- Available Quantity:
- 12130 Pieces
- Data sheet:
- SQ2362ES-T1_GE3.pdf
Introduction
Specifications
| Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
|---|---|
| Vgs (Max): | ±20V |
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | SOT-23-3 (TO-236) |
| Series: | Automotive, AEC-Q101, TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 95 mOhm @ 4.5A, 10V |
| Power Dissipation (Max): | 3W (Tc) |
| Packaging: | Tape & Reel (TR) |
| Package / Case: | TO-236-3, SC-59, SOT-23-3 |
| Other Names: | SQ2362ES-T1-GE3 SQ2362ES-T1_GE3-ND SQ2362ES-T1_GE3TR |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 18 Weeks |
| Manufacturer Part Number: | SQ2362ES-T1_GE3 |
| Input Capacitance (Ciss) (Max) @ Vds: | 550pF @ 30V |
| Gate Charge (Qg) (Max) @ Vgs: | 12nC @ 10V |
| FET Type: | P-Channel |
| FET Feature: | - |
| Expanded Description: | P-Channel 60V 4.3A (Tc) 3W (Tc) Surface Mount SOT-23-3 (TO-236) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Drain to Source Voltage (Vdss): | 60V |
| Description: | MOSFET N-CH 60V 4.4A TO236 |
| Current - Continuous Drain (Id) @ 25°C: | 4.3A (Tc) |
| Email: | [email protected] |
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