SQ2315ES-T1_GE3
Part Number:
SQ2315ES-T1_GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET P-CHAN 12V SOT23
Lead Free Status / RoHS Status:
Lead free / RoHS Compliant
Available Quantity:
20024 Pieces
Data sheet:
SQ2315ES-T1_GE3.pdf

Introduction

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Specifications

Vgs(th) (Max) @ Id:1V @ 250µA
Vgs (Max):±8V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:SOT-23-3 (TO-236)
Series:Automotive, AEC-Q101, TrenchFET®
Rds On (Max) @ Id, Vgs:50 mOhm @ 3.5A, 10V
Power Dissipation (Max):2W (Tc)
Packaging:Original-Reel®
Package / Case:TO-236-3, SC-59, SOT-23-3
Other Names:SQ2315ES-T1_GE3DKR
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:18 Weeks
Manufacturer Part Number:SQ2315ES-T1_GE3
Input Capacitance (Ciss) (Max) @ Vds:870pF @ 4V
Gate Charge (Qg) (Max) @ Vgs:13nC @ 4.5V
FET Type:P-Channel
FET Feature:-
Expanded Description:P-Channel 12V 5A (Tc) 2W (Tc) Surface Mount SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Drain to Source Voltage (Vdss):12V
Description:MOSFET P-CHAN 12V SOT23
Current - Continuous Drain (Id) @ 25°C:5A (Tc)
Email:[email protected]

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