SISS71DN-T1-GE3
Part Number:
SISS71DN-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET P-CH 100V 23A 1212-8
Lead Free Status / RoHS Status:
Lead free / RoHS Compliant
Available Quantity:
19155 Pieces
Data sheet:
SISS71DN-T1-GE3.pdf

Introduction

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Specifications

Vgs(th) (Max) @ Id:2.5V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PowerPAK® 1212-8
Series:ThunderFET®
Rds On (Max) @ Id, Vgs:59 mOhm @ 5A, 10V
Power Dissipation (Max):57W (Tc)
Packaging:Original-Reel®
Package / Case:PowerPAK® 1212-8
Other Names:SISS71DN-T1-GE3DKR
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:16 Weeks
Manufacturer Part Number:SISS71DN-T1-GE3
Input Capacitance (Ciss) (Max) @ Vds:1050pF @ 50V
Gate Charge (Qg) (Max) @ Vgs:15nC @ 4.5V
FET Type:P-Channel
FET Feature:-
Expanded Description:P-Channel 100V 23A (Tc) 57W (Tc) Surface Mount PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Drain to Source Voltage (Vdss):100V
Description:MOSFET P-CH 100V 23A 1212-8
Current - Continuous Drain (Id) @ 25°C:23A (Tc)
Email:[email protected]

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