SISS23DN-T1-GE3
SISS23DN-T1-GE3
Part Number:
SISS23DN-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET P-CH 20V 50A PPAK 1212-8S
Lead Free Status / RoHS Status:
Lead free / RoHS Compliant
Available Quantity:
17227 Pieces
Data sheet:
SISS23DN-T1-GE3.pdf

Introduction

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Specifications

Vgs(th) (Max) @ Id:900mV @ 250µA
Vgs (Max):±8V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PowerPAK® 1212-8S (3.3x3.3)
Series:TrenchFET®
Rds On (Max) @ Id, Vgs:4.5 mOhm @ 20A, 4.5V
Power Dissipation (Max):4.8W (Ta), 57W (Tc)
Packaging:Tape & Reel (TR)
Package / Case:8-PowerVDFN
Other Names:SISS23DN-T1-GE3TR
Operating Temperature:-50°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:24 Weeks
Manufacturer Part Number:SISS23DN-T1-GE3
Input Capacitance (Ciss) (Max) @ Vds:8840pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:300nC @ 10V
FET Type:P-Channel
FET Feature:-
Expanded Description:P-Channel 20V 50A (Tc) 4.8W (Ta), 57W (Tc) Surface Mount PowerPAK® 1212-8S (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Drain to Source Voltage (Vdss):20V
Description:MOSFET P-CH 20V 50A PPAK 1212-8S
Current - Continuous Drain (Id) @ 25°C:50A (Tc)
Email:[email protected]

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