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SIRA20DP-T1-RE3
- Part Number:
- SIRA20DP-T1-RE3
- Manufacturer:
- Vishay / Siliconix
- Description:
- MOSFET N-CHAN 25V POWERPAK SO-8
- Lead Free Status / RoHS Status:
- Lead free / RoHS Compliant
- Available Quantity:
- 17099 Pieces
- Data sheet:
- SIRA20DP-T1-RE3.pdf
Introduction
Specifications
| Vgs(th) (Max) @ Id: | 2.1V @ 250µA |
|---|---|
| Vgs (Max): | +16V, -12V |
| Technology: | MOSFET (Metal Oxide) |
| Series: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 0.58 mOhm @ 20A, 10V |
| Power Dissipation (Max): | 6.25W (Ta), 104W (Tc) |
| Packaging: | Tape & Reel (TR) |
| Package / Case: | PowerPAK® SO-8 |
| Other Names: | SIRA20DP-RE3 SIRA20DP-T1-RE3TR |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 19 Weeks |
| Manufacturer Part Number: | SIRA20DP-T1-RE3 |
| Input Capacitance (Ciss) (Max) @ Vds: | 10850pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs: | 200nC @ 10V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Expanded Description: | N-Channel 25V 81.7A (Ta), 100A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Drain to Source Voltage (Vdss): | 25V |
| Description: | MOSFET N-CHAN 25V POWERPAK SO-8 |
| Current - Continuous Drain (Id) @ 25°C: | 81.7A (Ta), 100A (Tc) |
| Email: | [email protected] |
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