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SIE836DF-T1-E3
- Part Number:
- SIE836DF-T1-E3
- Manufacturer:
- Vishay / Siliconix
- Description:
- MOSFET N-CH 200V 18.3A POLARPAK
- Lead Free Status / RoHS Status:
- Lead free / RoHS Compliant
- Available Quantity:
- 12740 Pieces
- Data sheet:
- SIE836DF-T1-E3.pdf
Introduction
Specifications
| Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
|---|---|
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | 10-PolarPAK® (SH) |
| Series: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 130 mOhm @ 4.1A, 10V |
| Power Dissipation (Max): | 5.2W (Ta), 104W (Tc) |
| Packaging: | Tape & Reel (TR) |
| Package / Case: | 10-PolarPAK® (SH) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Part Number: | SIE836DF-T1-E3 |
| Input Capacitance (Ciss) (Max) @ Vds: | 1200pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs: | 41nC @ 10V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Expanded Description: | N-Channel 200V 18.3A (Tc) 5.2W (Ta), 104W (Tc) Surface Mount 10-PolarPAK® (SH) |
| Drain to Source Voltage (Vdss): | 200V |
| Description: | MOSFET N-CH 200V 18.3A POLARPAK |
| Current - Continuous Drain (Id) @ 25°C: | 18.3A (Tc) |
| Email: | [email protected] |
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