SIA421DJ-T1-GE3
SIA421DJ-T1-GE3
Part Number:
SIA421DJ-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET P-CH 30V 12A SC70-6
Lead Free Status / RoHS Status:
Lead free / RoHS Compliant
Available Quantity:
19249 Pieces
Data sheet:
SIA421DJ-T1-GE3.pdf

Introduction

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Specifications

Vgs(th) (Max) @ Id:3V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PowerPAK® SC-70-6 Single
Series:TrenchFET®
Rds On (Max) @ Id, Vgs:35 mOhm @ 5.3A, 10V
Power Dissipation (Max):3.5W (Ta), 19W (Tc)
Packaging:Tape & Reel (TR)
Package / Case:PowerPAK® SC-70-6
Other Names:SIA421DJ-T1-GE3TR
SIA421DJT1GE3
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:24 Weeks
Manufacturer Part Number:SIA421DJ-T1-GE3
Input Capacitance (Ciss) (Max) @ Vds:950pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:29nC @ 10V
FET Type:P-Channel
FET Feature:-
Expanded Description:P-Channel 30V 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Drain to Source Voltage (Vdss):30V
Description:MOSFET P-CH 30V 12A SC70-6
Current - Continuous Drain (Id) @ 25°C:12A (Tc)
Email:[email protected]

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